 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage. *High current and high fT. *Excellent linerarity of hFE. *Fast switching time. TO-251 *Pb-free plating product number:2SD1803L PIN CONFIGURATION PIN NO. PIN NAME 1 BASE 2 COLLECTOR 3 EMITTER ORDERING INFORMATION Order Number Normal Lead free 2SD1803-TM3-T 2SD1803L-TM3-T Package TO-251 Packing Tube www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., 1 QW-R213-007,B 2SD1803 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current PULSE Tc=25 Power Dissipation Ta=25 Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICM PD TJ TSTG NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25) RATINGS 60 50 6 5 8 20 1 +150 -40 ~ +150 UNIT V V V A A W W ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) tON tS tF TEST CONDITIONS IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=4A VCE=5V, Ic=1A VCB=10V, f=1MHz IC=3A, IB=0.15A IC=3A, IB=0.15A See Test Circuit See Test Circuit See Test Circuit MIN 60 50 6 TYP MAX UNIT V V V A A 70 35 180 40 220 0.95 50 500 20 1 1 400 400 1.3 MHz pF mV V ns ns ns CLASSIFICATION OF hFE 1 RANK RANGE Q 70 ~ 140 R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R213-007,B 2SD1803 TEST CIRCUIT INPUT NPN EPITAXIAL SILICON TRANSISTOR IB1 RB IB2 50 VR + 100 PW=20S Duty Cycle1% -5V + 470 25V RL OUTPUT Ic=10IB1=-10IB2=2A (Unit : (resistance : , capacitance : F)) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R213-007,B 2SD1803 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS Ic -VCE 5 30mA Colletcor Current, Ic (A) Colletcor Current, Ic (A) 4 35mA 40mA 50mA 45mA 4 25mA 5 30mA Ic -VCE 25mA 20mA 3 20mA 15mA 3 15mA 10mA 5mA 2 10mA 5mA IB=0 0.4 0.8 1.2 1.6 2.0 2 1 0 0 1 0 0 IB=0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) Ic -VBE 6 Colletcor Current, Ic (A) 5 DC Current Gain, hFE 4 3 2 Ta=25 1 0 0 Ta=-25 VCE=2V 1000 7 5 3 2 100 7 5 3 2 Collector to Emitter Voltage, VCE (V) hFE -I c VCE=2V Ta=75 Ta=75 Ta=25 Ta=-25 0.2 0.4 0.6 0.8 1.0 1.2 10 23 57 5 7 0.01 0.1 2 3 5 71.0 Collector Current, IC (A) 2 3 5 7 10 Base to Emitter Voltage, VBE (V) fT -I c 1000 Gain-Bandwidth Product,fT -MHz 7 5 VCE=5V Output Capacitance, Cob (pF) 3 2 100 7 5 3 2 23 57 23 57 10 5 7 1.0 Cob -VcB f=1MHz 3 2 100 7 5 3 2 10 2 3 5 7 0.1 1.0 10 2 3 5 7 10 2 3 5 7 100 Colletcor Current, Ic (A) Colletcor to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R213-007,B 2SD1803 TYPICAL CHARACTERICS(cont.) VCE(sat) -Ic 5 NPN EPITAXIAL SILICON TRANSISTOR VBE(sat) -Ic Ic/IB=20 10 Ic/IB=20 7 5 3 2 Collector to Emitter Saturation Voltage, VCE(sat) (mV) 1000 7 5 3 2 100 7 5 3 2 Ta=75 Base to Emitter Saturation Voltage, VBE(sat) (V) 3 2 1.0 7 5 Ta=-25 Ta=25 Ta=-25 2 3 5 710 10 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) ASO 2 10 7 5 3 2 1.0 7 5 3 2 Icp Ta=25 Ta=75 3 2 3 5 7 1.0 2 3 5 7 10 5 7 0.01 2 3 5 7 0.1 Collector Current, IC (A) PD -Ta 10ms 24 1ms 100ms Power Dissipation, PD (W) Ic Collector Current, IC (A) 20 16 12 8 4 No heat sink 1 00 DC nT tio ra pe O 0.1 7 5 3 2 Tc=25 0.01 0.1 2 3 5 7 1.0 Colletcor to Emitter Voltage, VCE (V) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D C 25 a= nT t io ra pe O 23 5 7 10 25 c= 2 3 5 7100 20 40 60 80 100 120 140 160 Ambient Temperature, Ta () 5 QW-R213-007,B |
Price & Availability of 2SD1803-TM3-T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |